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| STB8NM60D STP8NM60D N-CHANNEL 600V - 0.9 - 8A - TO-220/D2PAK Fast Diode MDmeshTM Power MOSFET General features Type STB8NM60D STP8NM60D VDSS 600V 600V RDS(on) < 1.0 < 1.0 ID 8A 8A PTOT 100W 100W 3 1 2 High dv/dt and avalanche capabilities 100% avalanche rated Low input capacitance and gate charge Low gate input resistance Fast internal recovery diode TO-220 3 1 DPAK Description The FDmeshTM associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters Internal schematic diagram Applications The MDmeshTM family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies. Order codes Sales Type STB8NM60D STP8NM60D Marking B8NM60D P8NM60D Package DPAK TO-220 Packaging TAPE & REEL TUBE February 2006 Rev2 1/13 www.st.com 13 Electrical ratings STB8NM60D - STP8NM60D 1 Electrical ratings Table 1. Symbol VDS VDGR VGS ID ID IDM (1) Absolute maximum ratings Parameter Drain-Source Voltage (V GS = 0) Drain-gate Voltage (R GS = 20k) Gate-Source Voltage Drain Current (continuous) at T C = 25C Drain Current (continuous) at T C=100C Drain Current (pulsed) Total Dissipation at T C = 25C Derating Factor Value 600 600 30 8 5 32 100 0.8 20 -65 to 150 Unit V V V A A A W W/C V/ns C PTOT dv/dt(2) TJ Tstg 2. Peak Diode Recovery voltage slope Operating Junction Temperature Storage Temperature 1. Pulse width limited by safe operating area ISD 5A, di/dt 400A/s, VDD =80%V(BR)DSS Table 2. Symbol Rthj-case Rthj-amb Tl Thermal data Parameter Thermal resistance junction-case Max Thermal resistance junction-ambient Max Maximum lead temperature for soldering purpose Value 1.25 62.5 300 Unit C/W C/W C Table 3. Symbol IAR EAS Avalanche data Parameter Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) Single pulse avalanche energy (starting Tj=25C, ID=IAR, VDD=50V) Value 2.5 200 Unit A mJ 2/13 Rev2 STB8NM60D - STP8NM60D Electrical characteristics 2 Electrical characteristics (TCASE=25C unless otherwise specified) Table 4. Symbol V(BR)DSS IDSS On/off states Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Test Condictions ID = 250A, V GS= 0 VDS = Max Rating, VDS = Max Rating,Tc=125C Min. 600 1 10 100 Typ. Max. Unit V A A nA V IGSS VGS(th) RDS(on) Gate Body Leakage Current VGS = 30V, VDS = 0 (V DS = 0) Gate Threshold Voltage Static Drain-Source On Resistance VDS= VGS, ID = 250A VGS= 10V, ID=2.5A 3 4 0.9 5 1 Table 5. Symbol gfs (1) Ciss Coss Crss Coss eq.(2) Qg Qgs Qgd Dynamic Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Ouput Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Condictions VDS =ID(on) x R DS(on)max ID = 2.5A Min. Typ. 2.4 Max. Unit S VDS =25V, f=1 MHz, VGS=0 380 170 14 60 15 4 8 18 pF pF pF pF nC nC nC VGS=0, V DS =0V to 480V VDD=400V, ID = 5A VGS =10V (see Figure 13) 1. Pulsed: pulse duration=300s, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as C oss when VDS increases from 0 to 80% VDSS Rev2 3/13 Electrical characteristics STB8NM60D - STP8NM60D Table 6. Symbol td(on) tr td(off) tf td(off) tf tc Switching times Parameter Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-off Delay Time Fall Time Cross-over Time Test Condictions VDD =300V, ID=2.5A, RG=4.7, VGS=10V (see Figure 12) VDD =480V, ID=5A, RG=4.7, VGS=10V (see Figure 12) Min. Typ. 13 10 26 8 8 8 14 Max. Unit ns ns ns ns ns ns ns Table 7. Symbol ISD ISDM (1) Source drain diode Parameter Source-drain Current Source-drain Current (pulsed) Forward on Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD=5A, V GS=0 ISD=5A, di/dt = 100A/s, VDD=50 V, Tj=25C 107 330 6 178 640 7 Test Condictions Min. Typ. Max. 5 20 1.5 Unit A A V ns nC A ns nC A VSD(2) trr Qrr IRRM trr Qrr IRRM ISD=5A, di/dt = 100A/s, VDD=50 V, Tj=150C 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300s, duty cycle 1.5% 4/13 Rev2 STB8NM60D - STP8NM60D Electrical characteristics 2.1 Figure 1. Electrical characteristics (curves) Safe operating area Figure 2. Thermal impedance Figure 3. Output characterisics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance Rev2 5/13 Electrical characteristics Figure 7. Gate charge vs gate-source voltage Figure 8. STB8NM60D - STP8NM60D Capacitance variations Figure 9. Normalized gate threshold voltage vs temperature Figure 10. Normalized on resistance vs temperature Figure 11. Source-drain diode forward characteristics 6/13 Rev2 STB8NM60D - STP8NM60D Test circuit 3 Test circuit Figure 13. Gate charge test circuit Figure 12. Switching times test circuit for resistive load Figure 14. Test circuit for inductive load Figure 15. Unclamped Inductive load test switching and diode recovery times circuit Figure 16. Unclamped inductive waveform Figure 17. Switching time waveform Rev2 7/13 Package mechanical data STB8NM60D - STP8NM60D 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 8/13 Rev2 STB8NM60D - STP8NM60D Package mechanical data TO-220 MECHANICAL DATA DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 oP Q Rev2 9/13 Package mechanical data STB8NM60D - STP8NM60D D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 4 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch 3 1 10/13 Rev2 STB8NM60D - STP8NM60D Packaging mechanical data 5 Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956 BASE QTY 1000 * on sales type Rev2 11/13 Revision history STB8NM60D - STP8NM60D 6 Revision history Table 8. Date 13-Jan-2006 15-Feb-2006 Document revision history Revision 1 2 Initial release. Modified Description on first page Changes 12/13 Rev2 STB8NM60D - STP8NM60D Revision history Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners (c) 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com Rev2 13/13 |
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